Application of Generalized Pair Approximation to Diluted Magnetic Semiconductor Quantum Structures

Oscillating magnetoresistance in diluted magnetic semiconductor barrier structures

Ballistic spin polarized transport through diluted magnetic semiconductor single and double barrier structures is investigated theoretically using a two-component model. The tunneling magnetoresistance ~TMR! of the system exhibits oscillating behavior when the magnetic field is varied. An interesting beat pattern in the TMR and spin polarization is found for different nonmagnetic semiconductor/...

Magneto-optical studies of dilute nitrides and II-VI diluted magnetic semiconductor quantum structures

Theory of diluted magnetic semiconductor ferromagnetism

We present a theory of carrier-induced ferromagnetism in diluted magnetic semiconductors ( III1-xMnxV) which allows for arbitrary itinerant-carrier spin polarization and dynamic correlations. Both ingredients are essential in identifying the system's elementary excitations and describing their properties. We find a branch of collective modes, in addition to the spin waves and Stoner continuum w...

The Interplay Of Size- And Site-Dependence Of Magnetic Properties Of Diluted Magnetic Semiconductor Quantum Dots

About Ge(Mn) diluted magnetic semiconductor

Deposition of 0.5 monolayer of Mn by molecular beam epitaxy on the surface of a Ge(0 0 1) substrate, and annealing, allowed the fabrication of a cluster-free Ge(Mn) diluted solution. Electronic spin resonance (ESR) was used to study the magnetic properties of this solution. These measurements, combined with secondary ion mass spectrometry, atomic force microscopy, and Auger electron spectroscop...